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Towards wafer-scale integration of high repetition rate passively mode-locked surface-emitting semiconductor lasersLORENSER, D; UNOLD, H. J; MAAS, D. J. H. C et al.Applied physics. B, Lasers and optics (Print). 2004, Vol 79, Num 8, pp 927-932, issn 0946-2171, 6 p.Article

Vertical integration of ultrafast semiconductor lasersMAAS, D. J. H. C; BELLANCOURT, A.-R; RUDIN, B et al.Applied physics. B, Lasers and optics (Print). 2007, Vol 88, Num 4, pp 493-497, issn 0946-2171, 5 p.Article

Passively modelocked GalnNAs VECSEL at centre wavelength around 1.3 μmRUTZ, A; LIVERINI, V; MAAS, D. J. H. C et al.Electronics Letters. 2006, Vol 42, Num 16, pp 926-928, issn 0013-5194, 3 p.Article

On the design of electrically pumped vertical-external-cavity surface-emitting lasersKREUTER, P; WITZIGMANN, B; MAAS, D. J. H. C et al.Applied physics. B, Lasers and optics (Print). 2008, Vol 91, Num 2, pp 257-264, issn 0946-2171, 8 p.Article

Highly efficient optically pumped vertical-emitting semiconductor laser with more than 20 W average output power in a fundamental transverse modeRUDIN, B; RUTZ, A; HOFFINANN, M et al.Optics letters. 2008, Vol 33, Num 22, pp 2719-2721, issn 0146-9592, 3 p.Article

Modelocked quantum dot vertical external cavity surface emitting laserHOFFMANN, M; BARBARIN, Y; MAAS, D. J. H. C et al.Applied physics. B, Lasers and optics (Print). 2008, Vol 93, Num 4, pp 733-736, issn 0946-2171, 4 p.Article